Tīmeklis2000. gada 10. janv. · Abstract. The compound Rb3Bi2I9 was synthesized by melting a stoichiometric mixture of RbI and BiI3 and annealing for 1 month some degrees …
All-Inorganic Bismuth Halide Perovskite-Like Materials A(3)Bi(2
Tīmeklis2024. gada 28. maijs · Additionally, we attempted to reduce the undesirably wide band gap in Rb3Bi2I9 thin films by inducing chemical pressures through cation-size mismatch, with an underlying hypothesis that cation-size mismatch could induce compressive strain within the 2D Rb3Bi2I9 lattice. However, we found that all A … TīmeklisThe recombination of these self-trapped excitons is responsible for the broad PL emission. Rb3Bi2I9, Rb3Sb2I9, and Cs3Bi2I9 exhibit high resistivity and photoconductivity response under laser photoexcitation, indicating that these compounds possess potential as semiconductor hard radiation detector materials. family worship center singers baton rouge
熔体法制备无机钙钛矿半导体核辐射探测晶体与器件的研究进展
Tīmeklis2024. gada 8. dec. · (a)Cs3Bi2I9 (P63/mmc,左)和Rb3Bi2I9 (P21/n,右)的晶体结构。 (b)A3Bi2I9粉末样品漫反射吸收的Tauc图。 (c)A = Rb+(上)和Cs+(下)的能带结构和部分态密度。 (d)归一化的PL强度衰减曲线。 图五、优化的Cs3Bi2I9的晶体结构和带隙行为 (a-b)Cs3BiGaI9的结构和计算的带隙。 Tīmeklis2024. gada 5. sept. · As silicon-based metal oxide semiconductor field effect transistors get closer to their scaling limit, the importance of resistive random-access memory devices increases due to their low power consumption, high endurance and retention performance, scalability, and fast switching speed. In the last c … Tīmeklis2024. gada 30. apr. · Rb3Bi2I9 crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. there are three inequivalent Rb1+ sites. In the first Rb1+ site, Rb1+ is bonded in a 8-coordinate geometry to eight I1- atoms. There are a spread of Rb–I bond distances ranging from 3.79–4.23 Å. cooper hospital pediatrics